Piezoelectric device comprising ultrahighly-oriented aluminum nitride thin film and its manufacturing method
US7233094B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2003 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Jul 2, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
Abstract
The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5°.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.