Method of acquiring low distortion and high linear characteristic in triode-typed transconductor
US7233204B2 · kind B2 · utility
7Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2004 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | May 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/331
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Provided is a method of acquiring a high linear characteristic and a low distortion in a transconductor (operational transconductance amplifier), especially, in a triode region type transconductor among CMOS transconductors. A resistance is inserted in a source or a drain of an input triode transistor. The transconductor has a simple circuit structure, and has a large linear region, constant transconductance and low total harmonic distortion (THD) characteristic within an error region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.