Methods for making thick film elements
US7234214B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2005 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | Jun 28, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4981
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method of producing at least one thick film element, including depositing a material on a surface of at least one first substrate to form at least one thick film element structure having a thickness of approximately greater than 10 μm to 100 μm. Then, then the at least one thick film element structure is bonded to a second substrate, and the at least one first substrate is removed from the at least one thick film element structure using a lift-off process employing radiation energy. The lift-off process including emitting, from a radiation source, a radiation beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the first surface of the first substrate. The first substrate being substantially transparent at the wavelength of the radiation beam, permitting the radiation beam to generate sufficient energy at the interface to break the attachment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.