Non-volatile memory and method of manufacturing floating gate
US7235443B2 · kind B2 · utility
1Cited by
3References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 2, 2006 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | Aug 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6893
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing a floating gate is provided. The method includes the steps of forming a tunneling layer on a substrate, and forming a film layer containing a semiconductor component on the tunneling layer. The film layer consists of a semiconductor film or nano-dots.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.