Silicon carbide matrix composite material, process for producing the same and process for producing part of silicon carbide matrix composite material

US7235506B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Shoko Suyama · Kawasaki, JP
• Tsuneji Kameda · Tokyo, JP
• Yoshiyasu Itoh · Yokohama, JP

Key dates

• Filing date: Jun 18, 2003
• Grant date: Jun 26, 2007
• Expiry date: Jun 18, 2023

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C04B2237/365
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Silicon carbide matrix composite material (1) comprises silicon carbide matrix (2) as a host. The silicon carbide matrix (2) comprises first silicon carbide phase (3) of 0.1 to 10 μm average crystal grain diameter and second silicon carbide phase (4) of 0.01 to 2 μm average crystal grain diameter. In interstices of silicon carbide crystal grains constituting the silicon carbide matrix (2), liberated silicon phase (5) amounting to, for example, 5 to 50 mass % based on the composite material (1) is present continuously in network form. This fine structure enables realizing high strength and high toughness of the silicon carbide composite material (1).