Method for removing oxides from a Ge semiconductor substrate surface
US7238291B2 · kind B2 · utility
9Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2004 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Dec 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxides from the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.