Method of forming single crystal silicon thin film using sequential lateral solidification (SLS)
US7238559B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 7, 2005 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Jan 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming a single crystal silicon thin film using an SLS method and a patterned grain boundary filtering region. The method of forming a single crystal silicon thin film by crystallizing an amorphous silicon layer deposited on a substrate, includes patterning the amorphous silicon layer to have a second region having a narrower width than the first and third regions to prevent grain boundaries from reaching the third region, wherein the second region connects a first region where the crystallization commences and the third region where a single crystal without beam boundaries can grow, partially forming a mask layer on the first region, and crystallizing the amorphous silicon layer by irradiating a laser beam from the first region to the third region in steps using a linear beam SLS method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.