Boron ion delivery system
US7238597B2 · kind B2 · utility
6Cited by
36References
36Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2003 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Jan 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A boron ion plasma, generated by use of a cathodic arc, is manipulated and delivered to a large flat product such as a silicon wafer with boron ion energies suitable for incorporation of boron atoms into solid state devices as one of the key steps in manufacturing solid state electronics and with uniformity of boron dose over the area suitable for the scale of manufacturing desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.