Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US7238628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2004 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | May 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02244
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.