Organic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics

US7238961B2 · kind B2 · utility

Assignee

• PolyIC GmbH & Co. KG · DE

Inventors

• Adolf Bernds · Baiersdorf, DE
• Walter Fix · Fürth, DE
• Henning Rost · Erlangen, DE

Key dates

• Filing date: Jan 29, 2002
• Grant date: Jul 3, 2007
• Expiry date: Sep 5, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/1135

Abstract

The invention relates to an organic field effect transistor which is especially characterized by a cross-linked, structured insulating layer (4) on which the gate electrode (5) is arranged. The structure of the OFET ensures that the gate electrode (5) of an OFET can be used as a strip conductor to the source electrode (2) of the next transistor and can be used in the construction of larger circuits.