Thin film transistor and method for fabricating the same with step formed at certain layer
US7238965B2 · kind B2 · utility
2Cited by
17References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 12, 2004 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Mar 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
Abstract
The present invention relates to a thin film transistor for preventing short of circuit by step and a method for fabricating the thin film transistor and provides a thin film transistor including a buffer layer formed on glass substrate; an activation layer formed on the buffer layer; and a gate insulation layer formed on the buffer layer including the activation layer, with the buffer layer having a step formed between a lower part of the activation layer and a part except the lower part of the activation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.