Semiconductor device and magneto-resistive sensor integration
US7239000B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2004 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Jan 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/09
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-resistive sensor. In one embodiment, the semiconductor circuitry and magneto-resistive sensor are formed into a single package or, alternatively, monolithically formed into a single chip. In another embodiment, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive sensor, while other portions of the semiconductor circuitry may be formed on a second chip. As such, the first and second chips may be placed in close proximity and electrically connected together or alternatively have no intentional electrical interaction, Exemplary semiconductor devices that might be implemented include, without limitation, capacitors, inductors, operational amplifiers, set/reset circuitry for the magneto-resistive sensors, accelerometers, pressure sensors, position sensing circuitry, compassing circuitry, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.