Integrated circuit device
US7239002B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 21, 2005 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Jan 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a temperature sensor section of a semiconductor integrated circuit device, first vias of tungsten are formed at the topmost layer of a multi-layer wiring layer and pads of titanium are provided on regions of the multi-layer wiring layer which covers the vias. An insulating layer is provided in such a way as to cover the multi-layer wiring layer and the pads, second vias are so formed as to reach the pads. Vanadium oxide is buried in the second vias by reactive sputtering, and a temperature monitor part of vanadium oxide is provided in such a way as to connect the second vias each other. Accordingly, the temperature monitor part is connected between the two wires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.