Method of manufacturing a piezoelectric thin film resonator, manufacturing apparatus for a piezoelectric thin film resonator, piezoelectric thin film resonator, and electronic component
US7239067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2004 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Dec 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H3/02
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a piezoelectric thin film resonator forms, after forming a piezoelectric film on a substrate so as to cover a lower electrode formed on the substrate, an electrode material layer for forming an upper electrode above the piezoelectric film, forms a mask of a predetermined form on the electrode material layer, and then etches the electrode material layer to form the upper electrode. Before a step of forming the electrode material layer, a protective layer for protecting the piezoelectric film during etching of the electrode material layer is formed so as to cover at least a part of the piezoelectric film where the upper electrode is not formed, and the electrode material layer is then formed so as to cover the protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.