Method for manufacturing a piezoelectric resonator
US7240410B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | Jan 10, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49156
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.