Method for fabricating organic thin film transistor
US7241652B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2005 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | Aug 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/615
Abstract
Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.