Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device
US7241656B2 · kind B2 · utility
2Cited by
3References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 2006 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | May 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.