Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate
US7241694B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2005 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | Jan 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0297
Abstract
A method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a trench mask on an upper surface of a semiconductor substrate; forming the trench such that the trench having an aspect ratio equal to or larger than 2 and having a trench slanting angle equal to or larger than 80 degrees is formed; and removing a damage portion in such a manner that the damage portion disposed on an inner surface of the trench formed in the semiconductor substrate in the step of forming the trench is etched and removed in hydrogen atmosphere under decompression pressure at a temperature equal to or higher than 1600° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.