Wafer level package fabrication method using laser illumination
US7241966B2 · kind B2 · utility
5Cited by
11References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2004 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | Nov 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H3/007
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a WLP fabrication method capable of welding a lid wafer with a device wafer by using laser illumination. The WLP fabrication method can rapidly weld bonding metal strips of device and lid wafers with each other in order to couple the lid wafer with the device wafer while sealing an internal cavity from the outside without giving any thermal effect to a drive unit in the device wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.