Radiation emitting semiconductor component having a nitride compound semiconductor body and a contact metallization layer on its surface

US7242025B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Dominik Eisert · Regensberg, DE
• Stephan Kaiser · Regensburg, DE
• Michael Fehrer · Bad Abbach, DE
• Berthold Hahn · Hemau, DE
• Volker Harle · Hemau, DE

Key dates

• Filing date: Jan 31, 2003
• Grant date: Jul 10, 2007
• Expiry date: Mar 31, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3025

Abstract

A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radiation-transmissive, electrically conductive contact layer. The radiation generated is coupled out through the contact metallization layer or through openings in the contact metallization layer.