EEPROM device with voltage-limiting charge pump circuit
US7242053B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2005 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | Jan 14, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, an EEPROM device having voltage limiting charge pumping circuitry includes charge-pumping circuitry that limits the voltage supplied to the high voltage transistors to levels below the breakdown field of the tunnel oxide layer. The EEPROM device includes a substrate having a programming region, a tunnel region, a sensing region, and a low voltage region. A first oxide layer having a first thickness overlies the tunnel region and the sensing region. A second oxide layer having a second thickness overlies the low voltage region. The first oxide thickness is greater than the second oxide thickness. A charge pumping circuit is coupled to the programming region and to the tunnel region. The charge pumping circuit impresses a voltage level across the first oxide layer that is below the field breakdown voltage of first oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.