Lateral semiconductor device using trench structure and method of manufacturing the same
US7242058B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 17, 2005 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | Jun 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor substrate and a trench region having at least one trench disposed on a surface of the semiconductor substrate and having a trench length, a trench width and a trench depth. A well region is disposed in the substrate and surrounds the trench region. A source region and a drain region are disposed above the well region and around respective inner walls of the trench. The source region and the drain region are disposed in confronting relation relative one another and have a conductivity type different from a conductivity type of the well region. A gate insulating film is disposed on the surface of the semiconductor substrate and on an inner base and the inner walls of the trench. A gate electrode is disposed on the gate insulating film. A length of the gate electrode is shorter than the trench length and equal to a distance between the source region and the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.