Drive circuit for voltage driven type semiconductor element
US7242238B2 · kind B2 · utility
12Cited by
6References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 11, 2005 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | May 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/0828
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A drive circuit for a voltage driven type semiconductor element, includes: an electrical charge discharge unit that discharges electrical charge from a gate terminal of a voltage driven type semiconductor element when the voltage driven type semiconductor element is turned OFF; and an electrical discharge control unit that detects a time variation of a collector voltage of the voltage driven type semiconductor element, and controls electric discharge by the electrical charge discharge unit according to the time variation of the collector voltage which has been detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.