Method and device for the production of thin epitaxial semiconductor layers

US7244667B2 · kind B2 · utility

Assignee

• IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS · DE

Inventors

• Bernd Tillack · Frankfurt (Oder), DE
• Dirk Wolansky · Frankfurt, DE
• Georg Ritter · Frankfurt (Oder), DE
• Thomas Grabolla · Arensdorf, DE

Key dates

• Filing date: Jul 25, 2002
• Grant date: Jul 17, 2007
• Expiry date: Feb 18, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02658
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

System for producing diffusion-inhibiting epitaxial semiconductor layers, by means of which thin diffusion-inhibiting, epitaxial semiconductor layers can be produced on large semiconductor substrates at a high throughput.The surfaces of the semiconductor substrates to be coated are first cleaned, and the substrates are then heated in a low pressure batch reactor to a first temperature (prebake temperature). The surfaces to be coated are next subjected to a hydrogen prebake operation at a first reactor pressure. In the next step the semiconductor substrates are heated in a low pressure hot or warm wall batch reactor to a second temperature (deposition temperature) lower than the first temperature, and after a condition of thermodynamic equilibrium is reached the diffusion-inhibiting semiconductor layers are deposited on the surfaces to be coated in a chemical gaseous deposition process (CVD) at a second reactor pressure higher than, equal to or lower than the first reactor pressure.