Thin film transistor substrate and manufacturing method thereof
US7245012B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2004 |
| Grant date | Jul 17, 2007 |
| Priority date | — |
| Expiry date | Jun 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/83851
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor (TFT) substrate includes a glass substrate, a thin film transistor, an electrode pad, and a conductive bump. The TFT and the electrode pad are formed on the glass substrate, and the electrode pad is used for electrically connecting with the thin film transistor. The conductive bump includes several insulating bumps and a conductive layer. The insulating bumps are formed on the electrode pad dividedly, and the conductive layer covers the top surfaces of the insulating bumps, the inward surfaces of the insulating bumps, and the electrode pad between the insulating bumps for electrically connecting with the electrode pad. The outward side surfaces of the insulating bumps are exposed out of the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.