Semiconductor monolithic integrated optical transmitter
US7245644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2003 |
| Grant date | Jul 17, 2007 |
| Priority date | — |
| Expiry date | Aug 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor monolithic integrated optical transmitter including a plurality of active layers formed on a semiconductor substrate is disclosed, which comprises: a distributed feedback laser diode including a grating for reflecting light with a predetermined wavelength and a first active layer for oscillating received light from the grating; an electro-absorption modulator including a second active layer for receiving light from the first active layer, wherein the received light intensity is modulated through a change of absorbency in accordance with an applied voltage; an optical amplifier including a third active layer for amplifying received light from the second active layer; a first optical attenuator between the first active layer and the second active layer; and a second optical attenuator between the second active layer and the third active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.