Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode
US7245647B2 · kind B2 · utility
20Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2003 |
| Grant date | Jul 17, 2007 |
| Priority date | — |
| Expiry date | Jun 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5–50 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.