Complementary division mask, method of producing mask, and program
US7247410B2 · kind B2 · utility
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5References
11Claims
0Family size
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Key dates
| Filing date | Jul 7, 2004 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Jul 7, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/82
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A complementary division method able to suppress a pattern deformation by wet washing, having the steps of determining a definite division length able to suppress the pattern deformation when wet washing to a width and distance of a pattern that is assumed the pattern deformation over an elasticity limit is easiest given by wet washing in advance, dividing the entire line-and-space patterns at the determined division length in the longitudinal direction to divide suitably the line-and-space pattern by a simple algorithm, and further providing a method of producing a mask and program.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.