Semiconductor device and method for producing the same
US7247514B2 · kind B2 · utility
4Cited by
7References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2004 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Jan 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing a semiconductor device of the present invention includes forming a surface electrode on a semiconductor element, forming a solder layer by plating on one principal surface of the surface electrode, mounting the semiconductor element on the sub-mount so that the solder layer contacts a principal surface of the sub-mount, and bonding the sub-mount and the semiconductor element to each other via the solder layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.