High Q inductor integration
US7247544B1 · kind B1 · utility
2Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2002 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Apr 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an inductor integration process, a high Q inductor is achieved by forming an AlCu inductor via prior to depositing the inductor dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.