Doping method and semiconductor device using the same
US7247548B2 · kind B2 · utility
3Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2004 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Oct 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/211
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is conducted by attaching a molecular species with a higher electron affinity or lower ionization energy out of fullerene derivatives or metallocenes to the semiconductor surface to induce charge transfer from the molecule to the semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.