Semiconductor device, photoelectric conversion device and method of manufacturing same

US7247899B2 · kind B2 · utility

Assignee

• Canon Kabushiki Kaisha · JP

Inventors

• Hideshi Kuwabara · Yamato, JP
• Hiroshi Yuzurihara · Atsugi, JP
• Takayuki Kimura · Farmington Hills, US
• Mahito Shinohara · Tokyo, JP

Key dates

• Filing date: Sep 10, 2004
• Grant date: Jul 24, 2007
• Expiry date: Sep 10, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled.In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.