Thin film transistor and manufacturing method thereof
US7247911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2005 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Jan 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSix layer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSix layer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSix layer. Accordingly, the reliable TFT is provided through providing at last one CuSix layer for enhancing the adhesion of copper and silicon and avoiding the diffusion, and the yield is improved as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.