Magnetoresistive element using an organic nonmagnetic layer
US7248446B2 · kind B2 · utility
1Cited by
21References
25Claims
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Key dates
| Filing date | Nov 27, 2002 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Feb 11, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element has two magnetic layers and a nonmagnetic middle layer having organic molecules disposed between the two magnetic layers. The middle layer is thinner than 5 nm (50 Å). The magnetoresistive element exhibits a magnetoresistive effect as a function of the relative alignment of magnetizations of the first and the second magnetic layers and can be used in a magnetoresistive sensor in the based on GMR or TMR.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.