Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
US7250633B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2005 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | Sep 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.