Semiconductor device and method of manufacturing the same
US7250643B2 · kind B2 · utility
5Cited by
2References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2006 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | Mar 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a gate electrode that is provided on a semiconductor layer; a source electrode and a drain electrode that are provided on the semiconductor layer so as to interpose the gate electrode; a source wall that extends from the source electrode to a point between the gate electrode and the drain electrode through the region above the gate electrode, the source wall having a joining portion in the extending region; and an electrode portion that is joined to the joining portion and has a region extending closer to the drain electrode than the joining portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.