Integrated circuit including power diode
US7250668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2005 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | Jul 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fabricating a power diode in a second region in the semiconductor substrate. Dielectric material is formed between the first region and the second regions thereby providing electrical isolation between the integrated circuit in the first region and the power diode in the second region. The power diode can comprise a plurality of MOS source/drain elements and associated gate elements all connected together by one electrode of the diode, and a semiconductor layer in the second region can function as another source/drain of the power diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.