Radiation-hardened programmable device
US7251150B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2005 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | Oct 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a radiation-hardened integrated circuit includes the steps of supplying a prototype device including an SRAM memory circuit or programmable key circuit to a customer, having the customer develop working data patterns in the field in the same manner as a reading and writing to a normal RAM memory, having the customer save the final debugged data pattern, delivering the data pattern to the factory, loading the customer-developed data pattern into memory, programming the customer-developed data pattern into a number of production circuits, irradiating the production circuits at a total dosage of between 300K and 1 Meg RAD to burn the data pattern into memory, and shipping the irradiated and programmed parts to the customer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.