Dual contact ring and method for metal ECP process
US7252750B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2003 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Feb 1, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S204/07
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A dual contact ring for contacting a patterned surface of a wafer and electrochemical plating of a metal on the patterned central region of the wafer and removing the metal from the outer, edge region of the wafer. The dual contact ring has an outer voltage ring in contact with the outer, edge region of the wafer and an inner voltage ring in contact with the inner, central region of the wafer. The outer voltage ring is connected to a positive voltage source and the inner voltage ring is connected to a negative voltage source. The inner voltage ring applies a negative voltage to the wafer to facilitate the plating of metal onto the patterned region of the wafer. A positive voltage is applied to the wafer through the outer voltage ring to remove the plated metal from the outer, edge region of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.