Method of forming an in-situ recessed structure
US7252777B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2004 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Mar 29, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/00626
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention features a method of patterning a substrate that includes forming from a first material, disposed on the substrate, a first film having an original pattern that includes a plurality of projections. The projections extend from a nadir surface terminating in an apex surface defining a height therebetween. A portion of the first film in superimposition with the nadir surface defines a nadir portion. The nadir portion is removed to expose a region of the substrate in superimposition therewith, defining a plurality of recessions. A second material is disposed upon the first film to form a second film having a surface spaced-apart from the apex surface of the plurality of projections and filling the plurality of recessions to form a multi-film stack. The first film and portions of the second film are removed to create a plurality of spaced-apart projections of the second material on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.