Method for manufacturing light-emitting diode
US7253013B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2004 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Jul 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
A method for manufacturing a light-emitting diode (LED) is described. The method comprises: providing a temporary substrate; forming an illuminant epitaxial structure on the temporary substrate; forming a first transparent conductive layer on the illuminant epitaxial structure; forming a metal substrate on the first transparent conductive layer; forming an adhesion layer on the metal substrate; providing a supporting substrate, wherein the supporting substrate is connected to the metal substrate by the adhesion layer; removing the temporary substrate, so as to expose a surface of the illuminant epitaxial structure; forming a second transparent conductive layer on the exposed surface of the illuminant epitaxial structure; and forming an electrode on a portion of the second transparent conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.