Fabrication method of semiconductor device
US7253040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2004 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Oct 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating substrate is bonded to a monocrystalline Si substrate that includes a monocrystalline Si thin film transistor and a hydrogen ion implanted portion. After depositing an amorphous Si thin film, the amorphous Si thin film is modified into a polycrystalline Si thin film by irradiation of the excimer laser. In laser irradiation, the irradiation of the laser beam on the monocrystalline Si thin film transistor is blocked either by inserting a mask in part of the optical path of the laser beam, or by irradiating the laser beam before unnecessary portions of the monocrystalline Si substrate is detached. In this way, the irradiation of the laser beam for forming the polycrystalline Si thin film will not damage the monocrystalline Si thin film transistor in a semiconductor device in which the monocrystalline Si thin film transistor, which has been transferred, and the polycrystalline Si thin film transistor, which has been formed on the insulating substrate, are formed on the insulating substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.