Method of forming a thin film transistor
US7253041B2 · kind B2 · utility
13Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2005 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Apr 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
Abstract
A method of forming a thin film transistor comprising a deposition procedure of a microcrystal material layer and performing a plasma treatment procedure. The deposition procedure and the plasma treatment procedure are repeated. A buffer layer is thus formed on the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.