Methods for enhancing the formation of nickel mono-silicide by reducing the formation of nickel di-silicide
US7253071B2 · kind B2 · utility
2Cited by
4References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 7, 2005 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Jun 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for reducing stress in silicon to enhance the formation of nickel mono-silicide films formed thereon include a strain compensation source/drain implant process, a silicide formation process on an amorphous silicon layer, a strain compensating buried layer process, a strain compensating dielectric capping layer process during silicide formation, a two cycle anneal process during silicide formation, an excess nickel process to transform NiSi2 to NiSi.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.