Selectable area laser assisted processing of substrates
US7253120B2 · kind B2 · utility
6Cited by
9References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2003 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | Mar 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A system and method for selectable area laser treatment of a substrate, such as thin film transistors, the system including a holder holding a substrate in proximity to reactant, and laser beams each addressing independently selectable mutually set apart locations on the substrate to induce a reaction between the substrate and the reactant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.