Bandgap reference designs with stacked diodes, integrated current source and integrated sub-bandgap reference
US7253598B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2005 |
| Grant date | Aug 7, 2007 |
| Priority date | — |
| Expiry date | May 16, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/30
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
The performance of a bandgap reference circuit is improved by increasing the ΔVBE, and thereby correspondingly decreasing the input sensitivity of the error amplifier in the control loop. The ΔVBE can be increased by presenting stacked diode configurations at the amplifier inputs, by increasing the diode ratio presented at the amplifier inputs, and by providing a higher current in the CTAT leg than in the PTAT leg. The stacked diode configuration is achieved by producing isolated diodes with a triple well CMOS process. The stacked diode configuration and the triple well CMOS process also permit the input stage of the amplifier to use N-channel transistors operating in the threshold region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.