Nitrogen sources for molecular beam epitaxy
US7255746B2 · kind B2 · utility
18Cited by
4References
19Claims
0Family size
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Key dates
| Filing date | Sep 4, 2002 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | May 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.