Electrophotographic photosensitive member
US7255969B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2006 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Apr 4, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08285
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photosensitive member is provided minimizing the absorption of image exposure having a short wavelength in a surface layer and keeping good electrophotographic properties including resolving power. The electrophotographic photosensitive member includes a conductive substrate, and a photoconductive layer and a surface region layer sequentially superimposed on the conductive substrate. The surface region layer is composed of a non-single-crystal silicon nitride film containing an Group element in the periodic table and a carbon atom and using at least a silicon atom and a nitrogen atom as base materials. In the surface region layer, the Group 13 element content with respect to the total amount of constituent atoms has distribution having at least two local maximum values in the thickness direction, and an the average concentration of nitrogen atoms is 30 atm % to 70 atm %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.