Thin-film field-effect transistors and making method
US7256436B2 · kind B2 · utility
4Cited by
8References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 29, 2005 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Mar 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a thin-film field-effect transistor having a MIS structure, the insulator layer is formed of cyanoethylated dihydroxypropyl pullulan. The TFT is prepared by applying a cyanoethylated dihydroxypropyl pullulan solution onto a gate electrode in the form of a metal layer, drying the applied solution to form an insulator layer, and thereafter, forming a semiconductor layer thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.