Method of writing data to a semiconductor memory device
US7257032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2005 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Feb 21, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of writing data to a semiconductor memory device with memory cells, each of which stores data defined by threshold voltage thereof in a non-volatile manner, the device having first and second memory cells disposed adjacent to each other to be sequentially written in this order, the method including: performing a first data write operation for writing data defined by a threshold voltage lower than a desired threshold voltage into the first memory cell; performing a second data write operation for writing data into the second memory cell; and performing a third data writing operation for writing data defined by the desired threshold voltage into the first memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.